PE636BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9mΩ @VGS = 10V
ID 33A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Tc = 25 °C
33
Continuous Drain Current3
Tc = 100 °C TA = 25 °C
ID
21 10
Pulsed Drain Current1
TA= 70 °C
IDM
8 100
Avalanche Current
IAS 20
Avalanche Energy
L =0.1mH
EAS
20
TC = 25 °C
17.8
Power Dissipation
TC = 100 °C TA = 25 °C
PD
7 1.
PE636BA Datasheet
