• Part: PE6020K
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: semi one
  • Size: 888.35 KB
Download PE6020K Datasheet PDF
semi one
PE6020K
Description The PE6020K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =60V,ID =20A RDS(ON) <45mΩ @ VGS=10V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Schematic diagram Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply Marking and pin assignment TO-252-2L top view Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor ID...