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PE606DT
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS Q2 30V
RDS(ON) 11mΩ @VGS = 10V
Q1 30V
16mΩ @VGS = 10V
ID 30A 23A
PDFN 3X3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Q2
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current3 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
30 17 40
Continuous Drain Current
TA = 25 °C TA = 70 °C
ID
9.4 7.5
Avalanche Current
IAS 17
Avalanche Energy
L = 0.1mH
EAS
14
Power Dissipation
TC = 25 °C TC = 100 °C
PD
19 7.6
Power Dissipation
TA = 25 °C TA = 70 °C
PD
1.8 1.1
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
Q1 30 ±20 23 14 32 7.3 5.8 12 7 16 6 1.
PE606DT Datasheet
