• Part: PE6058S
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: ChipSourceTek
  • Size: 869.97 KB
Download PE6058S Datasheet PDF
ChipSourceTek
PE6058S
Description The PE6058S uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features - VDS = 60V, ID = 10A RDS(ON) < 16mΩ @ VGS=10V RDS(ON) < 20mΩ @ VGS=4.5V Schematic diagram - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application 技 - PWM applications - Load switch k - Power management Marking and pin assignment 矽源特科urce Te Absolute Maximum Ratings (TA=25℃ unless otherwise noted) o Parameter S Drain-Source Voltage Gate-Source Voltage ip Drain Current-Continuous Drain Current-Continuous (TA=70℃) h Pulsed Drain Current (Note 1) C Maximum Power Dissipation Symbol VDS VGS ID ID IDM PD SOP-8 Rating 60 ±20 10 7.7 40 3.1 Unit V V A A A W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance, Junction-to-Ambient(Note 2) RθJA ℃/W TEL: +86-0755-27595155 27595165...