• Part: PE6005
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: semi one
  • Size: 223.10 KB
Download PE6005 Datasheet PDF
semi one
PE6005
Description The PE6005 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =60V,ID =5A RDS(ON) < 45mΩ @ VGS=10V (Typ:38mΩ) Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply Schematic diagram SOT-223-3L view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit 60 ±20 5 3.5 20 2 -55 To 150 Unit V V A A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient(Note 2) RθJA 62.5 ℃/W Electrical Characteristics (TA=25℃unless otherwise...