PE6004 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The PE6004 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

VDS =60V,ID =4A RDS(ON).

semi one

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Datasheet Details

Part number	PE6004
Manufacturer	semi one
File Size	196.23 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE6004 Datasheet
Additional preview pages of the PE6004 datasheet.

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N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE6004 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS =60V,ID =4A RDS(ON) <100mΩ @ VGS=10V RDS(ON) < 120mΩ @ VGS=4.

Published: Dec 3, 2018 |