PE614DX
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 12.5mΩ @VGS = 4.5V
ID 30A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±10
Continuous Drain Current3
Pulsed Drain Current1 Avalanche Current Avalanche Energy
Power Dissipation
TC= 25 °C TC = 100 °C TA = 25 °C TA= 70 °C
L = 0.1mH TC= 25 °C TC = 100 °C TA = 25 °C TA= 70°C
ID
IDM IAS EAS
PD
30 19 11 9 80 22 24 17.8 7 2.5 1.
PE614DX Datasheet
