PE6018 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The PE6018 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS = 60V,ID =18A RDS(ON) < 16mΩ @ VGS=10V (Typ:11.5mΩ).
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.

semi one

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Datasheet Details

Part number	PE6018
Manufacturer	semi one
File Size	0.97 MB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE6018 Datasheet
Additional preview pages of the PE6018 datasheet.

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N-Channel Enhancement Mode Power MOSFET PE6018 Description The PE6018 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =18A RDS(ON) < 16mΩ @ VGS=10V (Typ:11.

Published: Dec 3, 2018 |