• Part: PE6018
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: semi one
  • Size: 0.97 MB
Download PE6018 Datasheet PDF
semi one
PE6018
Description The PE6018 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS = 60V,ID =18A RDS(ON) < 16mΩ @ VGS=10V (Typ:11.5mΩ) - Special process technology for high ESD capability - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation Application - Power switching application - Hard switched and High frequency circuits - Uninterruptible power supply Schematic diagram Marking and pin assignment SOP-8 top view Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power...