PE601CA
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V -30V
RDS(ON) 22mΩ @VGS = 10V 28mΩ @VGS = -10V
ID 20A -19A
Channel N P
100% UIS Tested PDFN 3X3P 100% Rg Tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL CH. LIMITS
Drain-Source Voltage
N 30 VDS P -30
Gate-Source Voltage
N ±20 VGS
P ±20
TC = 25 °C
N 20 P -19
Continuous Drain Current4
TC = 100 °C TA = 25 °C
N 13 P -12 ID N 8.1 P -7.4
TA= 70 °C
N 6.5 P -5.9
Pulsed Drain Current1
N 40 IDM P -35
Avalanche Current
N 11.9 IAS P -19.3
Avalanche Energy
L =0.1m H
N 7.1 EAS
P 18.7
Power Dissipation
TC = 25 °C TC = 100 °C
N 17 P 18 PD N 7.1 P 7.3
UNITS V V
A m J W
REV 1.1
1 2015/11/12
N&P-Channel Enhancement Mode MOSFET
Power Dissipation3 Junction & Storage Temperature Range
TA = 25 °C TA = 70...
