PE600SA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 12mΩ @VGS = 10V
ID 25A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
TC = 25 °C
30
Continuous Drain Current3
TC = 100 °C TA = 25 °C
ID
19 11
Pulsed Drain Current1
TA= 70 °C
IDM
9.3 80
Avalanche Current
IAS 21
Avalanche Energy
L =0.1mH
EAS
22
TC = 25 °C
20
Power Dissipation4
TC = 100 °C TA = 25 °C
PD
8.3 3.
PE600SA Datasheet
