PE600BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9.8mΩ @VGS = 10V
ID 32A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current3
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C TA = 25 °C TA= 70 °C
ID IDM
32 20 14 11 90
Avalanche Current
IAS 18.5
Avalanche Energy
L =0.1m H
Power Dissipation Power Dissipation4
TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C
17.8 7 3.5 2.3
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V V
A m J W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2 Junction-to-Ambient2 t ≦10s Steady-State
Rq JA Rq JA
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