PE606BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 20mΩ @VGS = 10V
ID3 22A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Tc = 25 °C
22
Continuous Drain Current3
Tc = 100 °C TA = 25 °C
ID
14 7
Pulsed Drain Current1
TA= 70 °C
IDM
5.7 60
Avalanche Current
IAS 12.6
Avalanche Energy
L =0.1mH
EAS
7.9
TC = 25 °C
17
Power Dissipation
TC = 100 °C TA = 25 °C
PD
7 1.7
TA = 70 °C
1.
PE606BA Datasheet
