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PE6050K - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The PE6050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =60V, ID=50A RDS(ON) < 18mΩ @ VGS=10V RDS(ON) < 22mΩ @ VGS=4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet preview – PE6050K

Datasheet Details

Part number PE6050K
Manufacturer Semione
File Size 583.20 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE6050K Datasheet
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N-Channel Enhancement Mode Power MOSFET Description The PE6050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. PE6050K General Features ● VDS =60V, ID=50A RDS(ON) < 18mΩ @ VGS=10V RDS(ON) < 22mΩ @ VGS=4.
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