• Part: PE6050K
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: Semione
  • Size: 583.20 KB
Download PE6050K Datasheet PDF
Semione
PE6050K
Description The PE6050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =60V, ID=50A RDS(ON) < 18mΩ @ VGS=10V RDS(ON) < 22mΩ @ VGS=4.5V - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application - PWM applications - Load switch - Power management Schematic diagram Marking and pin assignment Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS Drain Current-Continuous Drain Current-Continuous (TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range TJ,TSTG TO-252-2L Limit 60 ±20 50 35.4 200 85 169 -55 To 175 Unit V V A A A W m J ℃ Thermal Characteristic Thermal Resistance, Junction-to-Case RθJC ℃/W .sem...