PE610SA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3mΩ @VGS = 10V
ID 62A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
TC = 25 °C
62
Continuous Drain Current3
TC = 100 °C TA = 25 °C
ID
39 24
Pulsed Drain Current1
TA= 70 °C
IDM
19 100
Avalanche Current
IAS 34
Avalanche Energy
L =0.1mH
EAS
57.
PE610SA Datasheet
