PE606BA - N-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the PE606BA, a member of the PE606BA-NIKO N-Channel Enhancement Mode Field Effect Transistor family.

NIKO-SEM

📥 Download Datasheet

Datasheet Details

Part number	PE606BA
Manufacturer	NIKO-SEM
File Size	235.60 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	PE606BA Datasheet
Additional preview pages of the PE606BA datasheet.

📁 Similar Datasheet

PE606BA - MOSFET (UNIKC)
PE606DT - MOSFET (UNIKC)
PE60 - Power Panel 6W Potentiometer (Vishay)
PE6003 - N-Channel Enhancement Mode Power MOSFET (semi one)
PE6004 - N-Channel Enhancement Mode Power MOSFET (semi one)
PE6005 - N-Channel Enhancement Mode Power MOSFET (semi one)
PE600BA - MOSFET (UNIKC)
PE600SA - MOSFET (UNIKC)
PE6018 - N-Channel Enhancement Mode Power MOSFET (semi one)
PE601CA - MOSFET (UNIKC)

Other Datasheets by NIKO-SEM

PE610SA - N-Channel FET
PE636BA - N-Channel Field Effect Transistor
PE6R8DX - Dual N-Channel Enhancement Mode Field Effect Transistor
PE6W2EA - N-Channel Field Effect Transistor

Full PDF Text Transcription

Click to expand full text

NIKO-SEM N-Channel Enhancement Mode PE606BA Field Effect Transistor PDFN 3x3P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 18mΩ ID3 23A D G S D D DD #1 S S S G G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 TC = 25 °C TC = 100 °C Continuous Drain Current3 Pulsed Drain Current1 TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy L = 0.1mH Power Dissipation TC = 25 °C TC = 100 °C Power Dissipation4 TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VDS VGS ID IDM IAS EAS PD Tj, Tstg 30 V ±20 V 23 15 10.6 A 8.5 60 12.6 7.9 mJ 17 7 W 3.5 2.

Published: Dec 2, 2024 |