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PE632BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 4.5mΩ @VGS = 10V
ID 53A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Tc = 25 °C
53
Continuous Drain Current2
Tc = 100 °C TA = 25 °C
ID
33 15
Pulsed Drain Current1
TA= 70 °C
IDM
12 100
Avalanche Current
IAS 37.5
Avalanche Energy
L =0.1mH
EAS
70
TC = 25 °C
22.7
Power Dissipation
TC = 100 °C TA = 25 °C
PD
9 2
TA = 70 °C
1.3
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient3
RqJA
63
Junction-to-Case
RqJC
5.
PE632BA Datasheet
