PE636BA - N-Channel Field Effect Transistor

This page provides the datasheet information for the PE636BA, a member of the PE636BA-NIKO N-Channel Field Effect Transistor family.

NIKO-SEM

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Datasheet Details

Part number	PE636BA
Manufacturer	NIKO-SEM
File Size	386.55 KB
Description	N-Channel Field Effect Transistor
Datasheet	PE636BA Datasheet
Additional preview pages of the PE636BA datasheet.

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Full PDF Text Transcription

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NIKO-SEM N-Channel Enhancement Mode PE636BA Field Effect Transistor PDFN 3x3P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9mΩ ID 33A D G S D D DD #1 S S S G G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current3 TC = 100 °C TA = 25 °C Pulsed Drain Current1 TA = 70 °C Avalanche Current Avalanche Energy L = 0.1mH TC = 25 °C Power Dissipation TC = 100 °C TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VDS VGS ID IDM IAS EAS PD Tj, Tstg 30 V ±20 V 33 21 10.6 A 8.5 100 20 20 mJ 17.8 7 W 1.8 1.

Published: Oct 26, 2024 |