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PE6W2EA - N-Channel Field Effect Transistor

This page provides the datasheet information for the PE6W2EA, a member of the PE6W2EA-NIKO N-Channel Field Effect Transistor family.

Datasheet Summary

Features

  • Pb.
  • Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.
  • Products Integrated ESD diode with ESD Protected up to 2KV. ESD Protected Gate D D DD.

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Datasheet preview – PE6W2EA

Datasheet Details

Part number PE6W2EA
Manufacturer NIKO-SEM
File Size 364.41 KB
Description N-Channel Field Effect Transistor
Datasheet download datasheet PE6W2EA Datasheet
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Full PDF Text Transcription

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NIKO-SEM PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 18mΩ N-Channel Enhancement Mode Field Effect Transistor PE6W2EA PDFN 3x3P Halogen-Free & Lead-Free ID 24A Features • Pb−Free, Halogen Free and RoHS compliant. • Low RDS(on) to Minimize Conduction Losses. • Ohmic Region Good RDS(on) Ratio. • Optimized Gate Charge to Minimize Switching Losses. • Products Integrated ESD diode with ESD Protected up to 2KV. ESD Protected Gate D D DD Applications • Protection Circuits Applications. • Computer for DC to DC Converters Applications. #1 S S S G G. GATE D. DRAIN S.
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