PE6R8DX - Dual N-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the PE6R8DX, a member of the PE6R8DX-NIKO Dual N-Channel Enhancement Mode Field Effect Transistor family.

Datasheet Summary

Features

Pb.
Free, Halogen Free and RoHS compliant.
Low RDS(on) to Minimize Conduction Losses.
Ohmic Region Good RDS(on) Ratio.
Optimized Gate Charge to Minimize Switching Losses.

NIKO-SEM

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Datasheet Details

Part number	PE6R8DX
Manufacturer	NIKO-SEM
File Size	324.73 KB
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet	PE6R8DX Datasheet
Additional preview pages of the PE6R8DX datasheet.

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Full PDF Text Transcription

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NIKO-SEM Dual N-Channel Enhancement Mode PE6R8DX Field Effect Transistor PDFN 3x3P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 15.5mΩ ID 24A Features • Pb−Free, Halogen Free and RoHS compliant. • Low RDS(on) to Minimize Conduction Losses. • Ohmic Region Good RDS(on) Ratio. • Optimized Gate Charge to Minimize Switching Losses. Applications • Protection Circuits Applications. • Protable Devices for Battery PACK Applications.

Published: Jan 24, 2025 |