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PE6968E - N-Channel Enhancement Mode Power MOSFET

Description

The PE6 68E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

Features

  • VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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Datasheet preview – PE6968E

Datasheet Details

Part number PE6968E
Manufacturer semi one
File Size 816.67 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE6968E Datasheet
Additional preview pages of the PE6968E datasheet.

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Full PDF Text Transcription

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6 N-Channel Enhancement Mode Power MOSFET Description The PE6 68E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=4.
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