PE6986E - N-Channel Power MOSFET

Datasheet Summary

Description

The PE6986E uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

It is ESD protected.

Features

VDS = 18V, ID = 6.5A RDS(ON) < 15mΩ @ VGS=4.5V RDS(ON) < 16mΩ @ VGS=3.8V RDS(ON) < 20mΩ @ VGS=2.5V ESD Rating: 4000V HBM Schematic diagram.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package k.

ChipSourceTek

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Datasheet Details

Part number	PE6986E
Manufacturer	ChipSourceTek
File Size	1.03 MB
Description	N-Channel Power MOSFET
Datasheet	PE6986E Datasheet
Additional preview pages of the PE6986E datasheet.

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Full PDF Text Transcription

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N-Channel Enhancement Mode Power MOSFET Description The PE6986E uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. PE6986E General Features ● VDS = 18V, ID = 6.5A RDS(ON) < 15mΩ @ VGS=4.5V RDS(ON) < 16mΩ @ VGS=3.8V RDS(ON) < 20mΩ @ VGS=2.

Published: Jan 7, 2024 |