PE60N70
Description
The PE60N70 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS = 60V,ID =65A RDS(ON) < 12mΩ @ VGS=10V
(Typ:10.2mΩ)
- Special process technology for high ESD capability
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
Application
- Power switching application
- Hard switched and High frequency circuits
- Uninterruptible power supply
Schematic diagram Marking and pin assignment
TO-252-2L top view
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power...
