PE60N70 - N-Channel Enhancement Mode Power MOSFET

Description

The PE60N70 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS = 60V,ID =65A RDS(ON) < 12mΩ @ VGS=10V (Typ:10.2mΩ).
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.

semi one

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Datasheet Details

Part number	PE60N70
Manufacturer	semi one
File Size	955.09 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE60N70 Datasheet
Additional preview pages of the PE60N70 datasheet.

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Full PDF Text Transcription

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N-Channel Enhancement Mode Power MOSFET PE60N70 Description The PE60N70 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =65A RDS(ON) < 12mΩ @ VGS=10V (Typ:10.

Published: Dec 3, 2018 |