• Part: PE60P20K
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: semi one
  • Size: 841.99 KB
Download PE60P20K Datasheet PDF
semi one
PE60P20K
Description The PE60P20k uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features - VDS =-60V,ID =-20A RDS(ON) <70mΩ @ VGS=-10V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation Application - High side switch for full bridge converter - DC/DC converter for LCD display Schematic diagram Marking and pin assignment TO-252-3L top view Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation IDM PD Derating factor Single pulse avalanche energy (Note 5) Operating...