PE60P25K - P-Channel Enhancement Mode Power MOSFET

Description

The PE60P25K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

Features

VDS =-60V,ID =-25A RDS(ON).

semi one

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Datasheet Details

Part number	PE60P25K
Manufacturer	semi one
File Size	725.16 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	PE60P25K Datasheet
Additional preview pages of the PE60P25K datasheet.

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Full PDF Text Transcription

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P-Channel Enhancement Mode Power MOSFET Description The PE60P25K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

Published: Dec 3, 2018 |