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PE6D0BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 10.5mΩ @VGS = 10V
ID 32A
PDFN 3X3P
100% UIS Tested 100% Rg Tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current4 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
32 20 80
Continuous Drain Current
TA = 25 °C TA = 70 °C
ID
13 10
Avalanche Current
IAS 21
Avalanche Energy
L =0.1mH
EAS
22
Power Dissipation Power Dissipation3
TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C
PD
20.8 8.3 3.1 2
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V
A
mJ W °C
REV 1.
PE6D0BA Datasheet
