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SSM6K217FE - Silicon N-Channel MOSFET

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Features

  • (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 155 mΩ (typ. ) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) = 165 mΩ (typ. ) (@VGS = 4.5 V, ID = 1.0 A) RDS(ON) = 170 mΩ (typ. ) (@VGS = 3.6 V, ID = 1.0 A) RDS(ON) = 190 mΩ (typ. ) (@VGS = 2.5 V, ID = 0.5 A) RDS(ON) = 230 mΩ (typ. ) (@VGS = 1.8 V, ID = 0.2 A) 3. Packaging and Pin Assignment ES6 SSM6K217FE 1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6; Drain Start of commercial production 2014-02 1 2014-03-12 Rev.1.0 SSM6K217FE.

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Datasheet Details

Part number SSM6K217FE
Manufacturer Toshiba
File Size 213.14 KB
Description Silicon N-Channel MOSFET
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MOSFETs Silicon N-Channel MOS SSM6K217FE 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 155 mΩ (typ.) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) = 165 mΩ (typ.) (@VGS = 4.5 V, ID = 1.0 A) RDS(ON) = 170 mΩ (typ.) (@VGS = 3.6 V, ID = 1.0 A) RDS(ON) = 190 mΩ (typ.) (@VGS = 2.5 V, ID = 0.5 A) RDS(ON) = 230 mΩ (typ.) (@VGS = 1.8 V, ID = 0.2 A) 3. Packaging and Pin Assignment ES6 SSM6K217FE 1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6; Drain Start of commercial production 2014-02 1 2014-03-12 Rev.1.0 SSM6K217FE 4.
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