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SSM6K208FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K208FE
○ High-Speed Switching Applications ○ Power Management Switch Applications
Unit: mm
• 1.8V drive • Low ON-resistance:
Ron = 296 mΩ (max) (@VGS = 1.8 V) Ron = 177 mΩ (max) (@VGS = 2.5 V) Ron = 133 mΩ (max) (@VGS = 4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC Pulse
Drain power dissipation
Channel temperature
Storage temperature range
VDSS
30
V
VGSS
± 12
V
ID
1.9
A
IDP
3.8
PD (Note 1)
500
mW
Tch
150
°C
Tstg
−55 to 150
°C
ES6
1,2,5,6: Drain 3 : Gate 4 : Source
JEDEC
―
Note: Using continuously under heavy loads (e.g.
SSM6K208FE Datasheet
