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SSM6K513NU - Silicon N-Channel MOSFET

Features

  • (1) 4.5 V drive (2) Low drain-source on-resistance : RDS(ON) = 8.0 mΩ (typ. ) (@VGS = 4.5 V) RDS(ON) = 6.5 mΩ (typ. ) (@VGS = 10 V) 3. Packaging and Pin Assignment UDFN6B SSM6K513NU 1, 2, 5, 6: Drain 3: Gate 4: Source ©2016-2024 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2016-05 2024-10-01 Rev.6.0 SSM6K513NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
  • ) Characteristics Symbol Rating Unit Drain-source voltage Gate-so.

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Datasheet Details

Part number SSM6K513NU
Manufacturer Toshiba
File Size 313.08 KB
Description Silicon N-Channel MOSFET
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MOSFETs Silicon N-channel MOS (U-MOS�-H) SSM6K513NU 1. Applications • Power Management Switches 2. Features (1) 4.5 V drive (2) Low drain-source on-resistance : RDS(ON) = 8.0 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 6.5 mΩ (typ.) (@VGS = 10 V) 3. Packaging and Pin Assignment UDFN6B SSM6K513NU 1, 2, 5, 6: Drain 3: Gate 4: Source ©2016-2024 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2016-05 2024-10-01 Rev.6.0 SSM6K513NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25�) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 30 V (Note 1) VGSS ±20 Drain current (DC) Drain current (pulsed) ID (Note 2) IDP 15 A 50 Power dissipation Power dissipation (Note 3) PD (t ≤ 10 s) (Note 3) 1.
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