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SSM6K06FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6K06FU
High Speed Switching Applications
· · · Small package Low on resistance : Ron = 160 mΩ max (@VGS = 4 V) : Ron = 210 mΩ max (@VGS = 2.5 V) Low gate threshold voltage Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 20 ±12 1.1 2.2 300 150 -55~150 Unit V V A
Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range
mW °C °C
JEDEC JEITA
― ― 2-2J1D
Note 1: Mounted on FR4 board. (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 0.32 mm ´ 6) Figure 1.
2
TOSHIBA
Weight: 6.8 mg (typ.
SSM6K06FU Datasheet
