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SSM6K781G - Silicon N-Channel MOSFET

Datasheet Summary

Features

  • (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 17.9 mΩ (typ. ) (@VGS = 2.5 V, ID = 1.5 A) RDS(ON) = 14.4 mΩ (typ. ) (@VGS = 4.5 V, ID = 1.5 A) 3. Packaging and Pin Assignment SSM6K781G WCSP6C A1: Drain A2: Gate B1: Drain B2: Source C1: Drain C2: Source 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS 12 V Gate-source voltage VGSS ±8 Drain current (DC) (Note 1) ID.

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Datasheet Details

Part number SSM6K781G
Manufacturer Toshiba
File Size 226.16 KB
Description Silicon N-Channel MOSFET
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MOSFETs Silicon N-Channel MOS SSM6K781G 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 17.9 mΩ (typ.) (@VGS = 2.5 V, ID = 1.5 A) RDS(ON) = 14.4 mΩ (typ.) (@VGS = 4.5 V, ID = 1.5 A) 3. Packaging and Pin Assignment SSM6K781G WCSP6C A1: Drain A2: Gate B1: Drain B2: Source C1: Drain C2: Source 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS 12 V Gate-source voltage VGSS ±8 Drain current (DC) (Note 1) ID 7 A Drain current (pulsed) (Note 1), (Note 2) IDP 14 Power dissipation (Note 3) PD 1.6 W Power dissipation (t ≤ 10 s) (Note 3) PD 2.
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