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SSM6K361NU - Silicon N-Channel MOSFET

Features

  • (1) 4.5 V drive (2) Low drain-source on-resistance : RDS(ON) = 65 mΩ (typ. ) (@VGS = 4.5 V) RDS(ON) = 51 mΩ (typ. ) (@VGS = 10 V) 3. Packaging and Pin Assignment UDFN6B SSM6K361NU 1, 2, 5, 6: Drain 3: Gate 4: Source ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-12 2020-04-17 Rev.7.0 SSM6K361NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V.

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Datasheet Details

Part number SSM6K361NU
Manufacturer Toshiba
File Size 236.76 KB
Description Silicon N-Channel MOSFET
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Full PDF Text Transcription

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MOSFETs Silicon N-channel MOS (U-MOS-H) SSM6K361NU 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) 4.5 V drive (2) Low drain-source on-resistance : RDS(ON) = 65 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 51 mΩ (typ.) (@VGS = 10 V) 3. Packaging and Pin Assignment UDFN6B SSM6K361NU 1, 2, 5, 6: Drain 3: Gate 4: Source ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-12 2020-04-17 Rev.7.0 SSM6K361NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 3.5 A Drain current (pulsed) (Note 1), (Note 2) IDP 14 Power dissipation (Note 3) PD 1.
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