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SSM6K08FU
CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)/Category
SSM6K08FU
High Speed Switching Applications
· · · Small package Low on resistance: Ron = 105 mΩ (max) (@VGS = 4 V) Ron = 140 mΩ (max) (@VGS = 2.5 V) High-speed switching: ton = 16 ns (typ.) toff = 15 ns (typ.) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note1) Tch Tstg Rating 20 ±12 1.6 3.2 300 150 -55~150 Unit V V A mW °C °C
JEDEC JEITA TOSHIBA
― ― 2-2J1D
Note1: Mounted on FR4 board. 2 (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.32 mm ´ 6)
Figure 1.
Weight: 6.8 mg (typ.
SSM6K08FU Datasheet
