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SSM6K209FE www.DataSheet4U.com
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K209FE
○ High-Speed Switching Applications ○ Power Management Switch Applications
• • 4.0V drive Low ON-resistance: Ron = 145mΩ (max) (@VGS = 4.0 V) Ron = 74mΩ (max) (@VGS = 10 V)
1.6±0.05 1.0±0.05 0.5 0.5 1 2 3 1.6±0.05 1.2±0.05
UNIT: mm
Absolute Maximum Ratings (Ta = 25˚C)
Characteristic Drain–source voltage Gate–source voltage Drain current Drain power dissipation Channel temperature Storage temperature DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg Rating 30 ± 20 2.5 5.0 500 150 −55~150 Unit V V
6 5 4 0.2±0.05
Unit V μA μA V S mΩ pF nC ns V
0.55±0.05
mW °C °C
1, 2, 5, 6 : Drain 3 : Gate : Source
Using continuously under heavy loads (e.g.
SSM6K209FE Datasheet
