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SSM6K22FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ)
SSM6K22FE
High Current Switching Applications DC-DC Converter
Unit: mm
• Suitable for high-density mounting due to compact package
• Low on resistance:
RDS(ON) = 170 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 230 mΩ (max) (@VGS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
20
V
Gate-source voltage
VGSS
±12
V
Drain current
DC
ID
Pulse
IDP
1.4 A
5.6
1,2,5,6 : Drain
3
: Gate
4
: Source
Power dissipation Channel temperature Storage temperature range
PD
500
mW
(Note 1)
Tch
150
°C
Tstg
−55 to 150
°C
JEDEC JEITA TOSHIBA
2-2N1A
Note:
Using continuously under heavy loads (e.g. the application of
Weight: 3 mg (typ.
SSM6K22FE Datasheet
