Datasheet4U Logo Datasheet4U.com

SSM6K514NU - Silicon N-Channel MOSFET

Features

  • (1) 4.5 V drive (2) Low drain-source on-resistance : RDS(ON) = 11.2 mΩ (typ. ) (@VGS = 4.5 V) RDS(ON) = 8.9 mΩ (typ. ) (@VGS = 10 V) 3. Packaging and Pin Assignment UDFN6B SSM6K514NU 1, 2, 5, 6: Drain 3: Gate 4: Source ©2016-2024 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2016-05 2024-09-30 Rev.5.0 SSM6K514NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
  • ) Characteristics Symbol Rating Unit Drain-source voltage Gate-s.

📥 Download Datasheet

Datasheet preview – SSM6K514NU

Datasheet Details

Part number SSM6K514NU
Manufacturer Toshiba
File Size 309.68 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet SSM6K514NU Datasheet
Additional preview pages of the SSM6K514NU datasheet.

📁 Similar Datasheet

  • SSM6K504NU - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • SSM6K06FU - High Speed Switching Applications (Toshiba Semiconductor)
  • SSM6K07FU - DC-DC Converters High Speed Switching Applications (Toshiba Semiconductor)
  • SSM6K08FU - CategoryTOSHIBA Field Effect Transistor (Toshiba Semiconductor)
  • SSM6K201FE - Power Management Switch Applications (Toshiba Semiconductor)
  • SSM6K202FE - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • SSM6K203FE - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • SSM6K204FE - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • SSM6K208FE - Silicon N-Channel MOSFET (Toshiba Semiconductor)
  • SSM6K209FE - MOSFET (Toshiba Semiconductor)
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
MOSFETs Silicon N-channel MOS (U-MOS�-H) SSM6K514NU 1. Applications • Power Management Switches 2. Features (1) 4.5 V drive (2) Low drain-source on-resistance : RDS(ON) = 11.2 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 8.9 mΩ (typ.) (@VGS = 10 V) 3. Packaging and Pin Assignment UDFN6B SSM6K514NU 1, 2, 5, 6: Drain 3: Gate 4: Source ©2016-2024 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2016-05 2024-09-30 Rev.5.0 SSM6K514NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25�) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 40 V VGSS ±20 Drain current (DC) Drain current (pulsed) ID (Note 1) IDP 12 A 50 Power dissipation Power dissipation (Note 2) PD (t ≤ 10 s) (Note 2) 1.25 W 2.
Published: |