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SSM6K203FE - Silicon N-Channel MOSFET

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Part number SSM6K203FE
Manufacturer Toshiba Semiconductor
File Size 223.26 KB
Description Silicon N-Channel MOSFET
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SSM6K203FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K203FE ○ High-Speed Switching Applications ○ Power Management Switch Applications • 1.5 V drive • Low ON-resistance: Ron = 153 mΩ (max) (@VGS = 1.5V) Ron = 106 mΩ (max) (@VGS = 1.8V) Ron = 76 mΩ (max) (@VGS = 2.5V) Ron = 61 mΩ (max) (@VGS = 4.0V) Absolute Maximum Ratings (Ta = 25˚C) Unit: mm Characteristic Symbol Rating Unit Drain–source voltage VDSS 20 V Gate–source voltage VGSS ± 10 V Drain current DC ID Pulse IDP 2.8 A 5.6 Drain power dissipation PD (Note 1) 500 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g.
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