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SSM6K211FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅢ)
SSM6K211FE
○ High-Speed Switching Applications
○ Power Management Switch Applications
• 1.5-V drive • Low ON-resistance:
Ron = 118 mΩ (max) (@VGS = 1.5 V) Ron = 82 mΩ (max) (@VGS = 1.8 V) Ron = 59 mΩ (max) (@VGS = 2.5 V) Ron = 47 mΩ (max) (@VGS = 4.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25˚C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
20
V
Gate-source voltage
VGSS
± 10
V
Drain current
DC
ID
Pulse
IDP
3.2 A
6.4
Drain power dissipation
PD (Note 1)
500
mW
Channel temperature
Tch
150
°C
ES6
1,2, 5, 6: Drain 3: Gate 4: Source
Storage temperature
Tstg
−55 to 150
°C
JEDEC
―
Note:Using continuously under heavy loads (e.g.
SSM6K211FE Datasheet
