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SSM6K210FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K210FE
○ High-Speed Switching Applications ○ Power Management Switch Applications
Unit: mm
• 4.0-V drive • Low ON-resistance: Ron = 371 mΩ (max) (@VGS = 4.0 V),
Ron = 228 mΩ (max) (@VGS = 10 V)
Absolute Maximum Ratings (Ta = 25˚C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
±20
V
Drain current
DC
ID
Pulse
IDP
1.4 A
2.8
Drain power dissipation
PD (Note1)
500
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to 150
°C
1.2.5.6 3. 4.
ES6
: Drain : Gate : Source
JEDEC
―
Note: Using continuously under heavy loads (e.g.
SSM6K210FE Datasheet
