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SSM6K518NU - Silicon N-Channel MOSFET

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Features

  • (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 33 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 74 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 108 mΩ (max) (@VGS = 1.5 V) 3. Packaging and Pin Assignment UDFN6B SSM6K518NU 1, 2, 5, 6: Drain 3: Gate 4: Source ©2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2020-04 2020-05-12 Rev.1.0 SSM6K518NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Char.

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Datasheet Details

Part number SSM6K518NU
Manufacturer Toshiba
File Size 387.59 KB
Description Silicon N-Channel MOSFET
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MOSFETs Silicon N-Channel MOS (U-MOS-H) SSM6K518NU 1. Applications • Power Management Switches • High-Speed Switching 2. Features (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 33 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 74 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 108 mΩ (max) (@VGS = 1.5 V) 3. Packaging and Pin Assignment UDFN6B SSM6K518NU 1, 2, 5, 6: Drain 3: Gate 4: Source ©2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2020-04 2020-05-12 Rev.1.0 SSM6K518NU 4.
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