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SSM6K31FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6K31FE
○ High speed switching ○ DC-DC Converter
: mm
• 4-V drive • Low RDS (ON): R DS (ON) = 320 mΩ (max) (@VGS = 10 V)
: R DS (ON) = 540 mΩ (max) (@VGS = 4 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC Pulse
Drain power dissipation
Channel temperature
Storage temperature range
VDS
20
V
VGSS
±20
V
ID
1.2
A
IDP
2.4
PD(Note 1)
500
mW
Tch
150
°C
Tstg
−55 to 150
°C
1,2,5,6: Drain 3: Gate 4: Source
JEDEC
―
JEITA
―
Note:
Using continuously under heavy loads (e.g. the application of
TOSHIBA
2-2N1J
high temperature/current/voltage and the significant change in temperature, etc.
SSM6K31FE Datasheet
