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SSM6K32TU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6K32TU
○ Relay drive, DC/DC converter application
z z 4Vdrive Low on resistance: Ron = 440mΩ (max) (@VGS = 4 V) Ron = 300mΩ (max) (@VGS = 10 V) Unit: mm
Absolute Maximum Ratings (Ta = 25℃)
Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 60 ±20 2 6 500 150 −55~150 Unit V V A mW °C °C
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
SSM6K32TU Datasheet
