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SSM6K24FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
SSM6K24FE
High Speed Switching Applications
• Optimum for high-density mounting in small packages • Low on-resistance: Ron = 145mΩ (max) (@VGS = 4.5 V)
Ron = 180mΩ (max) (@VGS = 2.5 V)
Unit: mm 1.6±0.05 1.2±0.05
0.2±0.05
1.6±0.05 1.0±0.05 0.5 0.5
Absolute Maximum Ratings (Ta = 25°C)
1
6
2
5
Characteristics Drain-Source voltage
Symbol VDS
Rating
Unit
30
V
3
4
0.12±0.05
0.55±0.05
Gate-Source voltage
VGSS
± 12
V
Drain current
DC
ID
Pulse
IDP
0.5 A
1.5
Drain power dissipation Channel temperature
PD
500
mW
(Note 1)
Tch
150
°C
1,2,5,6 :Drain 3 :Gate 4 :Source
Storage temperature range
Tstg
−55 to 150
°C
ES6
Note: Using continuously under heavy loads (e.g.
SSM6K24FE Datasheet
