Datasheet4U Logo Datasheet4U.com

FDMC0310AS-F127 - N-Channel MOSFET

Download the FDMC0310AS-F127 datasheet PDF (FDMC0310AS included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel mosfet.

Description

conversion application.

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

Features

  • Max rDS(on) = 4.4 mW at VGS = 10 V, ID = 19 A.
  • Max rDS(on) = 5.2 mW at VGS = 4.5 V, ID = 17.5 A.
  • Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency.
  • SyncFET Schottky Body Diode.
  • MSL1 Robust Package Design.
  • 100% UIL Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDMC0310AS-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

  • FDMC0310AS - MOSFET (Fairchild Semiconductor)
  • FDMC15N06 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDMC2512SDC - N-Channel MOSFET (Fairchild Semiconductor)
  • FDMC2514SDC - N-Channel Dual Cool PowerTrench SyncFET (Fairchild Semiconductor)
  • FDMC2514SDC - N-Channel MOSFET (VBsemi)
  • FDMC2523P - P-Channel QFET (Fairchild Semiconductor)
  • FDMC2610 - N-Channel UltraFET Trench MOSFET (Fairchild Semiconductor)
  • FDMC2674 - N-Channel UltraFET Trench MOSFET (Fairchild Semiconductor)
  • FDMC3020DC - N-Channel Dual Cool PowerTrench MOSFET (Fairchild Semiconductor)
  • FDMC3300NZA - N-Channel MOSFET (Fairchild Semiconductor)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
SyncFETt – N-Channel, POWERTRENCH) 30 V, 21 A, 4.4 mW FDMC0310AS, FDMC0310AS-F127 General Description The FDMC0310AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic schottky body diode. Features • Max rDS(on) = 4.4 mW at VGS = 10 V, ID = 19 A • Max rDS(on) = 5.2 mW at VGS = 4.5 V, ID = 17.
Published: |