FDMC2674 Datasheet | Fairchild Semiconductor

.. FDMC2674 N-Channel UltraFET Trench® MOSFET May 2006 FDMC2674 N-Channel UltraFET Trench® MOSFET 220V, 1A, 366mΩ Features General Description - Max rDS(on) = 366mΩ at VGS = 10V, ID = 1A - Typ Qg = 12.7nC at VGS = 10V - Low Miller charge - Low Qrr Body Diode - Optimized efficiency at high frequencies - UIS Capability ( Single Pulse and Repetitive Pulse) - RoHS pliant tm UltraFET® device bines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Applications - DC/DC converters and Off-Line UPS - Distributed Power Architectures Bottom 5 6 7 8 D 1 D D D Top 5 6 S G 4 3 2 1 4 3 2 7 8 S S MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25°C unless otherwise noted...