FDMC2674 Datasheet Text
MOSFET
- N-Channel, UltraFET Trench
220 V, 7.0 A, 366 mW
FDMC2674
General Description UltraFET device bines characteristics that enable benchmark efficiency in power conversion applications. Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
Features
- Max RDS(on) = 366 mW at VGS = 10 V, ID = 1.0 A
- Typ Qg = 12.7 nC at VGS = 10 V
- Low Miller Charge
- Low Qrr Body Diode
- Optimized Efficiency at High Frequencies
- UIS Capability (Single Pulse and Repetitive Pulse)
- Pb- Free, Halide Free and RoHS pliant
Applications
- DC- DC Converters and Off- Line UPS
- Distributed Power Architectures
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value Unit
VDS Drain to Source Voltage
220
V
VGS Gate to Source Voltage
±20
V
ID
Drain Current:
A
Continuous (Silicon limited) TC = 25°C...
