FDMC007N30D Datasheet Text
MOSFET
- Dual, N-Channel, POWERTRENCH)
Q1: 30 V, 11.6 mW; Q2: 30 V, 6.4 mW
FDMC007N30D
General Description This device includes two specialized N- Channel MOSFETs in a dual Power33 (3mm × 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.
Features
Q1: N- Channel
- Max RDS(on) = 11.6 mW at VGS = 10 V, ID = 10 A
- Max RDS(on) = 13.3 mW at VGS = 4.5 V, ID = 9 A
Q1: N- Channel
- Max RDS(on) = 6.4 mW at VGS = 10 V, ID = 16 A
- Max RDS(on) = 7.0 mW at VGS = 4.5 V, ID = 15 A
- RoHS pliant
Applications
- Mobile puting
- Mobile Internet Devices
- General Purpose Point of Load
MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Q1
Q2
Unit
VDS Drain to Source Voltage
30
30
V
VGS Gate to Source Voltage (Note 4) ±12
±12
V...