FDMC007N08LC Datasheet Text
MOSFET
- N-Channel, Shielded Gate POWERTRENCH)
80 V, 66 A, 7 mW
FDMC007N08LC
General Description This N- Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimise on- state resistance and yet maintain superior switching performance with best in class soft body diode.
Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 7.0 mW at VGS = 10 V, ID = 21 A
- Max RDS(on) = 10.4 mW at VGS = 4.5 V, ID = 17 A
- 5 V Drive Capable
- 50% Lower Qrr than Other MOSFET Suppliers
- Lowers Switching Noise / EMI
- MSL1 Robust Package Design
- 100% UIL Tested
- This Device is Pb- Free, Halide Free and RoHS pliant
Applications
- Primary DC- DC MOSFET
- Synchronous Rectifier in DC- DC and AC- DC
- Motor Drive
-...