FDMC008N08C Datasheet Text
MOSFET
- N-Channel, Shielded Gate, POWERTRENCH)
80 V, 60 A, 7.8 mW
FDMC008N08C
General Description This N- Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimise on- state resistance and yet maintain superior switching performance with best in class soft body diode.
Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 7.8 mW at VGS = 10 V, ID = 21 A
- Max RDS(on) = 19.3 mW at VGS = 6 V, ID = 10 A
- 50% Lower Qrr Than Other MOSFET Suppliers
- Lowers Switching Noise/EMI
- MSL1 Robust Package Design
- 100% UIL tested
- Pb- Free, Halide Free and RoHS pliant
Applications
- Primary DC- DC MOSFET
- Synchronous Rectifier in DC- DC and AC- DC
- Motor Drive
- Solar
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDS
Drain to Source Voltage
80
V
VGS
Gate to Source Voltage...