FDMC010N08LC Datasheet Text
FDMC010N08LC
N‐Channel Shielded Gate POWERTRENCH) MOSFET
80 V, 50 A, 10.9 mW
General Description This N-Channel MV MOSFET is produced using
ON Semiconductor’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 10.9 mW at VGS = 10 V, ID = 16 A
- Max RDS(on) = 18.4 mW at VGS = 4.5 V, ID = 13 A
- 50% Lower Qrr than Other MOSFET Suppliers
- Lowers Switching Noise/EMI
- MSL1 Robust Package Design
- 100% UIL Tested
- These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS pliant
Applications
- Primary DC- DC MOSFET
- Synchronous Rectifier in DC- DC and AC- DC
- Motor Drive
- Solar
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDS
Drain to Source Voltage
80
V
VGS
Gate to Source Voltage...