FDMC010N08C Datasheet Text
MOSFET
- N-Channel, Shielded Gate POWERTRENCH)
80 V, 51 A, 10 mW
FDMC010N08C
General Description This N- Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized to minimise on- state resistance and yet maintain superior switching performance with best in class soft body diode.
Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 10 mW at VGS = 10 V, ID = 16 A
- Max RDS(on) = 25 mW at VGS = 6 V, ID = 8 A
- 50% Lower Qrr than Other MOSFET Suppliers
- Lowers Switching Noise/EMI
- MSL1 Robust Package Design
- 100% UIL Tested
- This Device is Pb- Free, Halide Free and is RoHS pliant
Application
- Primary DC- DC MOSFET
- Synchronous Rectifier in DC- DC and AC- DC
- Motor Drive
- Solar
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Units
VDS Drain to Source Voltage
80
V
VGS Gate to Source Voltage
±20
V
ID...